Analysis the Effect of Subthreshold Leakage on Carry Save Adder
Sunil Kumar Ojha1, O.P. Singh2, G.R.Mishra3
1Sunil Kumar Ojha, Department of Electronics & Communication Engineering, Amity School of Engineering & Technology (ASET) Amity University, India.
2O.P. Singh, Department of Electronics & Communication Engineering, Amity School of Engineering & Technology (ASET) Amity University, India.
3G.R. Mishra, Department of Electronics & Communication Engineering, Amity School of Engineering & Technology (ASET) Amity University, India.
Manuscript received on 02 April 2021 | Revised Manuscript received on 24 April 2021 | Manuscript Accepted on 15 March 2021 | Manuscript published on 30 March 2021 | PP: 12-15 | Volume-1 Issue-1, March 2021 | Retrieval Number: A1004031121/2021©LSP
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© The Authors. Published by Lattice Science Publication (LSP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper analyzes the effect of subthreshold leakage on carry save adder. When the gate to source voltage reduces and goes below the threshold voltage there is still some amount of current flow inside the circuit and that is undesired for the design. As the process technology advancing much rapidly the threshold voltage of MOS devices reduces very drastically, and it must be taken care for the low power devices since it leads to small amount of leakage current which intern increases the power consumption of the devices. Adders are the basic building blocks for any digital circuit design and it is used in almost all arithmetic calculations. The CSA proves efficient adders for Digital ICs due to its fast and accurate calculations. Hence this paper perform subthreshold analysis on CSA; and the observe results shows the total average power is nearly 4.93µW, the propagation delay for complete operation is 16.3ns and since this design uses GDI cell so there is a reduction in area with 37%.
Keywords: Subthreshold Leakage, Gate Diffusion Input (GDI), Carry Save Adder (CSA), Leakage current, Transistor Modeling.